Pust, P., Schmidt, P. J. & Schnick, W. A revolution in lighting. Nat. Mater. 14, 454–458 (2015).
Schubert, E. F. & Kim, J. K. Solid-state light sources getting smart. Science 308, 1274–1278 (2005).
Zhang, H. & Rogers, J. A. Recent advances in flexible inorganic light emitting diodes: from materials design to integrated optoelectronic platforms. Adv. Opt. Mater. 7, 1800936 (2019).
Choi, M. et al. Stretchable active matrix inorganic light-emitting diode display enabled by overlay-aligned roll-transfer printing. Adv. Funct. Mater. 27, 1606005 (2017).
Kim, H.-S. et al. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting. Proc. Natl Acad. Sci. USA 108, 10072–10077 (2011).
Park, S.-I. et al. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Science 325, 977–981 (2009).
Jariwala, D., Marks, T. J. & Hersam, M. C. Mixed-dimensional van der Waals heterostructures. Nat. Mater. 16, 170–181 (2017).
Kong, W. et al. Polarity governs atomic interaction through two-dimensional materials. Nat. Mater. 17, 999–1004 (2018).
Kim, Y. et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature 544, 340–343 (2017).
Chung, K., Lee, C.-H. & Yi, G.-C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 330, 655–657 (2010).
Li, Y. et al. 48 × 48 pixelated addressable full-color micro display based on flip-chip micro LEDs. Appl. Opt. 58, 8383–8389 (2019).
Peng, D., Zhang, K. & Liu, Z. Design and fabrication of fine-pitch pixelated-addressed micro-LED arrays on printed circuit board for display and communication applications. IEEE J. Electron Devices Soc. 5, 90–94 (2017).
Bower, C. A. et al. Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes. Photon. Res. 5, A23–A29 (2017).
Jain, N. et al. More than microLEDs: mass transfer of pixel engines for emissive displays. Dig. Tech. Pap. 51, 642–645 (2020).
Cok, R. S. et al. Inorganic light-emitting diode displays using micro-transfer printing. J. Soc. Inf. Disp. 25, 589–609 (2017).
Yang, S. Y. et al. Elastomer surfaces with directionally dependent adhesion strength and their use in transfer printing with continuous roll-to-roll applications. Adv. Mater. 24, 2117–2122 (2012).
Park, S.-C. et al. Millimeter thin and rubber-like solid-state lighting modules fabricated using roll-to-roll fluidic self-assembly and lamination. Adv. Mater. 27, 3661–3668 (2015).
Seo, S.-Y. et al. Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe. Nat. Electron. 1, 512–517 (2018).
Wang, Y. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 1, 228–236 (2018).
Goossens, S. et al. Broadband image sensor array based on graphene–CMOS integration. Nat. Photon. 11, 366–371 (2017).
Lin, Z. et al. Solution-processable 2D semiconductors for high-performance large-area electronics. Nature 562, 254–258 (2018).
Chen, K.-J. et al. Resonant-enhanced full-color emission of quantum-dot-based display technology using a pulsed spray method. Adv. Funct. Mater. 22, 5138–5143 (2012).
Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).
Shinde, S. M. et al. Surface-functionalization-mediated direct transfer of molybdenum disulfide for large-area flexible devices. Adv. Funct. Mater. 28, 1706231 (2018).
Youn, C. et al. Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs. J. Cryst. Growth 250, 331–338 (2003).
Hums, C. et al. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate. J. Appl. Phys. 101, 033113 (2007).
Reshchikov, M. A. & Morkoç, H. Luminescence properties of defects in GaN. J. Appl. Phys. 97, 061301 (2005).
Li, H. et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385–1390 (2012).
Feng, Z. C. Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition. Opt. Eng. 41, 2022–2031 (2002).
Liu, Z. J. et al. Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD. IEEE Electron Device Lett. 35, 330–332 (2014).
Wan, Y. et al. Epitaxial single-layer MoS2 on GaN with enhanced valley helicity. Adv. Mater. 30, 1703888 (2018).
Ruzmetov, D. et al. Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride. ACS Nano 10, 3580–3588 (2016).
Choi, M. et al. Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor. Sci. Adv. 4, eaas8721 (2018).
Schauble, K. et al. Uncovering the effects of metal contacts on monolayer MoS2. ACS Nano 14, 14798–14808 (2020).